Guangzhou Xianyi Electronic Technology Co., Ltd.
Manufacturer of Advanced Semiconductor Connecting Materials,Providing technical consulting service and solutions
Xianyi Products
AMB Ceramic Substrates
Active Metal Brazing (AMB) ceramic substrate usually used as the package substrate for high-voltage power devices and it is specially suitable for the package demand of the third-generation semiconductor SiC devices..
Features
lSelf-developed active brazing material
lWhole process flow self-controlled
lUltra-low interface void, high thermal conductivity
lExcellent temperature shock resistant, high reliability
Specifications
Ceramic Specification | Thermal Conductivity (W/m·K) | Si3N4: ≥80 | AlN: ≥170 | ZAT: ≥27 |
Thickness (mm) | 0.25/0.32 | 0.25/0.38/0.63/1.0 | 0.25/0.32/0.38 | |
Copper Specification | Thickness (mm) | 0.3/0.4/0.5/0.8 | ||
Product Specification | Max Dimension (mm) | 138*190 | ||
Max Usable Area (mm) | 127*178 | |||
Product Performance | Void Ratio (C-SAM, 50 um resolution) | ＜0.3% | ||
Peel Strength (N/mm) @50 mm/min, copper thickness 0.3mm | ＞10 | |||
Life (cycle) @-55~150℃, holding 15min, transfer ＜10s | ＞5000 | ＞40 | ＞200 | |
Solderability | ＞95% | |||
Wire Bonding @300um Al wire, shear speed 500um/s, shear height≤30um | Shear strength≥1000gf Al residue ≥50% | |||
Ceramic/Copper Thickness Combinations
Copper Thickness/mm Ceramic Thickness/mm
| 0.1-0.3 | 0.4 | 0.5 | 0.8 |
0.25 | Si3N4, ZTA | Si3N4, ZTA | Si3N4, ZTA | Si3N4 |
0.32 | Si3N4, ZTA | Si3N4, ZTA | Si3N4, ZTA | Si3N4 |
0..38 | AlN, Al2O3/ZTA | - | - | - |
0.63 | AlN, Al2O3 | AlN, Al2O3 | AlN, Al2O3 | - |
1.00 | AlN, Al2O3 | AlN, Al2O3 | AlN, Al2O3 | AlN, Al2O3 |
Surface Treatment of AMB Ceramic Substrates
Surface Roughness of Copper | Ra≤1.5μm, Ra≤10μm, Rmax=50μm | |
Plate | Bare Copper ＆Anti-oxidation | - |
Electroless Ni | 2~10μm(P 6%-10%) | |
Electroless Ag | 0.1~1.0μm | |
Electroless NiAu | Ni: 2~10μm, Au: 0.05~0.3μm | |
Electroless NiPdAu | Ni: 2~10μm, Pd: 0.05~0.3μm, Au: 0.05~0.3μm | |
Solder Resist | Line Width, Spacing, Tolerance | ≥0.2mm, tolerance ±0.2mm |
Position Tolerance | ±0.2mm | |
Thickness | 5~40μm | |
Temperature Resistance | ≤320℃/10s | |
Applications
New Energy Vehicle
Rail Traffic
Smart Grid
Photovoltaic and Energy Storage
